![[EBIC] Electron Beam Induced Current](https://image.mono.ipros.com/public/product/image/03a/387108025/IPROS8986659968992890200.jpg?w=280&h=280)
[EBIC] Electron Beam Induced Current
A method to obtain information about the electric field structure inside the sample (junction structure of semiconductors).
By irradiating an electron beam within a SEM device, electron-hole pairs are generated in the sample. Normally, these pairs recombine and disappear, but if they are generated in regions with an internal electric field, such as a depletion layer, the carriers can be drifted by the internal electric field and extracted as a current. This current is referred to as EBIC (Electron Beam Induced Current), and by obtaining it alongside the SEM image, it is possible to visualize the position of the pn junction and the extent of the depletion layer. - Evaluation of pn junctions and crystal defects (dislocations, stacking faults, etc.) is possible. - By overlaying with the SEM image, the positions of the junctions and crystal defects can be identified.
- Company：一般財団法人材料科学技術振興財団 MST
- Price：Other
